Name: SSM3J66MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: 264-SSM3J66MFV,L3FTR-ND
Price: 0.3388 EUR
Availability: OutOfStock

SSM3J66MFV,L3F is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

SSM3J66MFV,L3XHF

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: 0,29000 €

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SSM3J66MFV,L3F
DigiKey Part Number	264-SSM3J66MFV,L3FTR-ND - Tape & Reel (TR) 264-SSM3J66MFV,L3FCT-ND - Cut Tape (CT) 264-SSM3J66MFV,L3FDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	SSM3J66MFV,L3F
Description	MOSFET P-CH 20V 800MA VESM
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM
Datasheet	Datasheet
EDA/CAD Models	SSM3J66MFV,L3F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.6 nC @ 4.5 V
Vgs (Max)	+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723
Base Product Number	SSM3J66