Name: SI7489DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7489DP-T1-GE3TR-ND
Price: 3.2428 EUR
Availability: OutOfStock

SI7489DP-T1-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 0

Unit Price: 2,47000 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI7489DP-T1-GE3
DigiKey Part Number	SI7489DP-T1-GE3TR-ND - Tape & Reel (TR) SI7489DP-T1-GE3CT-ND - Cut Tape (CT) SI7489DP-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI7489DP-T1-GE3
Description	MOSFET P-CH 100V 28A PPAK SO-8
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SI7489DP-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	41mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SI7489