Name: RS1G180MNTB
Brand: Rohm Semiconductor
SKU: 846-RS1G180MNTR-ND
Price: 2.0086 EUR
Availability: OutOfStock

RS1G180MNTB is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Infineon Technologies

In Stock: 0

Unit Price: 0,81000 €

Similar

Diodes Incorporated

In Stock: 0

Unit Price: 0,36824 €

Similar

Infineon Technologies

In Stock: 0

Unit Price: 0,39000 €

Similar

Texas Instruments

In Stock: 0

Unit Price: 1,86000 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RS1G180MNTB
DigiKey Part Number	846-RS1G180MNTR-ND - Tape & Reel (TR) 846-RS1G180MNCT-ND - Cut Tape (CT) 846-RS1G180MNDKR-ND - Digi-Reel®
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	RS1G180MNTB
Description	MOSFET N-CH 40V 18A/80A 8HSOP
Customer Reference
Detailed Description	N-Channel 40 V 18A (Ta), 80A (Tc) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1293 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN
Base Product Number	RS1G